13.10.2017 - 12:00

6th OCL-TP Workshop

On 30-31th October, the 6th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


28.02.2016 - 16:54 article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.


12.12.2015 - 12:00

3rd OCL-TP Workshop

On 10-11th December, the 3rd International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


INA - Technological Physics > Reithmaier_Info

Biography of Prof. Dr. J.P. Reithmaier


Prof. Reithmaier studied physics at TU Munich and made his PhD at Siemens and Walter-Schottky-Institute in 1990. Until 1992, he worked as Postdoc at IBM in Rüschlikon, Switzerland on III/V epitaxy. In 1992, he joined University of Würzburg where he built-up a research group working on nanostructured semiconductors and their applications in optoelectronic devices. In 2005 he became a full professor of physics and director of the Institute of Nanostructure Technologies and Analytics at the University of Kassel.

He is author or co-author of more than 600 journal and conference papers (about 300 in refereed journals, 2 books, 7 book articles and 110 invited talks, (WEB of Science: > 6200 citations, h-index = 37 / Google Scholar: > 9500, h-index = 44). He is a member of the Deutsche Physikalische Gesellschaft (DPG) and of IEEE Photonics Society. He became Fellow of IEEE in 2011. Since 2014, he is co-editor of OPTICA. He is on the advisory board of different national centers (EPSRC National Centre for III-V Technolgies in UK, Centre of Nanophotonics for Terabit Communications (NATEC) in Denmark). Since 2016, he is speaker of the Center of Interdisciplinary Nanostructure Science and Technology (CINSaT) of the University of Kassel
Major expertise and interests

Prof. Reithmaier has more than 30 years of experience in laser physics and optoelectronic devices, more than 25 years in molecular beam epitaxy and more than 20 years in nanostructuring of semiconductor materials. His research group participated in more than 10 European projects (three of them coordinated by him) and more than 10 national projects (BMBF, DFG, VW foundation). He is reviewer for numereous journals (PRL, PRB, APL, JAP, IEEE journals, IOP and OSA journals, ...) and for national (BMBF, DFG) and international funding agencies (EU, ISF, GIF, SRC, EPSRC, SNF, FWF, NSERC, DOE, ...).
His current interests are focused on nanostructured semiconductors and their optoelectronic applications. This includes self-assembly techniques of III-V quantum dot materials on GaAs, InP and Si substrates as well as nanostructuring of by high-resolution lithographical techniques. New types of devices are investigated like nanolasers, single photon sources, ultra-high speed lasers, high power lasers, light emitting devices on silicon and nanocrystalline diamond for biomedical, quantum computing and quantum communication applications.

Selection of publications

(1)        J.P. Reithmaier, R. Höger, H. Riechert, A. Heberle, G. Abstreiter, G. Weimann, "Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering", Appl. Phys. Lett. 56, 536 (1990).

(2)       J.P. Reithmaier, R. Höger, H. Riechert, "Experimental evidence for the transition from two- to three-dimensional behaviour of excitons in quantum-well structures", Phys. Rev. B 43, 4933 (1991).

(3)       J. Dreybrodt, A. Forchel, J.P. Reithmaier, "Optical properties of GaInAs/GaAs surface quantum wells", Phys. Rev. B 48, 14741 (1993).

(4)  J.P. Reithmaier, M. Röhner, H. Zull, F. Schäfer, A. Forchel, "Size Dependence of Confined Optical Modes in Photonic Quantum Dots", Phys. Rev. Lett. 78, 378 (1997).

(5)    M. Bayer, T. Gutbrod, A. Forchel, J.P. Reithmaier, T.L. Reinecke, P.A. Knipp, A.A. Dremin, V.D. Kulakovskii, "Optical modes in photonic molecules", Phys. Rev. Lett. 81, 2582 (1998).

(6)       M. Bayer, A. Kuther, A. Forchel, A. Gorbunov, V.B. Timofeev, F. Schäfer, J.P. Reithmaier, T.L. Reinecke, S.N. Walck "Electron and hole g-factors and exchange interaction energies from studies of the fine structure in In0.6Ga0.4As quantum dots", Phys. Rev. Lett. 82, 1748 (1999).

(7)       M. Kamp, J. Hofmann, A. Forchel, F. Schäfer, J.P. Reithmaier, "Low threshold high quantum efficiency laterally gain coupled InGaAs/AlGaAs distributed feedback lasers", Appl. Phys. Lett. 74, 483 (1999).

(8)       S. Rennon, F. Klopf, J.P. Reithmaier, and A. Forchel, "12 µm-long edge-emitting quantum-dot laser", Electron. Lett. 37 (11), pp. 690-691 (2001).

(9)       R. Schwertberger, D. Gold, J.P. Reithmaier, and A. Forchel, "Long wavelength InP based quantum dot lasers", IEEE Phot. Technol. Lett. 14 (6), pp. 735-737 (2002).

(10)     Ch. Schuller, F. Klopf, J.P. Reithmaier, A. Forchel, "Tunable photonic crystals fabricated in III- V semiconductor slab waveguides using infiltrated liquid crystals", Appl. Phys. Lett. 82 (17), pp. 2767-2769 (2003).

(11)     J.P. Reithmaier, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, S. Reitzenstein, L. Keldysh, V.Kulakovskii, T.L. Reinecke and A. Forchel, " Strong coupling in a quantum dot micropillar cavity system", Nature 432, pp. 197 - 200 (2004).

(12)     H. Dery, E. Benisty, A. Epstein, R. Alizon, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J.P. Reithmaier, A. Forchel, "On the nature of quantum dash structures", J. Appl. Phys. 95 (11), pp. 6103 - 6111 (2004).

(13)     J.P. Reithmaier, A. Somers, S. Deubert, R. Schwertberger, W. Kaiser, A. Forchel, M. Calligaro, P. Resneau, O. Parillaud, S. Bansropun, M. Krakowski, R. Alizon, D. Hadass, A. Bilenca, H. Dery, V. Mikhelashvili, G. Eisenstein, M. Gioannini, I. Montrosset, T.W Berg, M. van der Poel, J. Mørk, B. Tromborg, "InP based lasers and optical amplifiers with wire-/dot-like active regions" (invited review paper), J. Phys. D 38, pp. 2088-2102 (2005).

(14)     J.P. Reithmaier, G. Eisenstein, A. Forchel, "InAs/InP Quantum Dash Lasers and Amplifiers", Proceedings of the IEEE 95 (9), pp. 1779-1790 (2007, invited).

(15)     J.P. Reithmaier, "Strong exciton-photon coupling in semicondcutor quantum dot systems", Semiconductor Science & Technology 23 (12), Art. No 123001 (2008, invited paper).

(16)     J.P. Reithmaier, "Nanostructured Semiconductor Materials for Optoelectronic Applications" in Nanostructured Materials for Advanced Technological Applications, edited by J.P. Reithmaier, Plamen Petkov, Wilhelm Kulisch, Cyril Popov, Nato ASI Series B, pp. 447-476, Springer (2009).

(17)     E.-M. Pavelescu, C. Gilfert, J. P. Reithmaier, A. Martín-Mínguez, I. Esquivias, “ High-power tunnel-injection 1060-nm InGaAs-(Al)GaAs quantum-dot lasers”, Photonics Technology Letters 21 (14), 999 (2009).

(18)     C. Gilfert, E.M. Pavelescu; J.P. Reithmaier, "Influence of the As2/As4 growth modes on the formation of quantum dot like InAs islands grown on InAlGaAs/InP (100)", Appl. Phys. Lett. 96 (19), 191903, (2010).

(19)     S. Afzal, F. Schnabel, W. Scholz, J.P. Reithmaier, D. Gready, G. Eisenstein, P. Melanen, V. Vilokkinen, I. Montrosset, M. Vallone, "1.3 µm two-section DBR lasers based on surface defined gratings for high speed telecommunication", IEEE Phot. Technol. Lett. 23, pp. 411-413 (2011)

(20)    C. Gilfert, E.-M. Pavelescu, J.P. Reithmaier, T. Westphalen, M. Traub, N. Michel, M. Krakowski, "15 W Fiber Coupled Quantum Dot Pump Module", IEEE Photon. Technol. Lett. 24 (12), pp.1030-1032 (2012).

(21)     D. Gready, G. Eisenstein, C. Gilfert, V. Ivanov, J.P. Reithmaier, "High Speed Low Noise InAs/InAlGaAs/InP 1.55 µm Quantum Dot Lasers", Phot. Technol. Lett. 24 (10), pp. 809-811 (2012). 

(22)     M. Benyoucef, M. Usman, J.P. Reithmaier, "Bright light emissions with narrow spectral linewidths from single InAs/ GaAs quantum dots directly grown on silicon substrates", Appl. Phys. Lett. 102, Art. No. 132101 (2013).

(23)     M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler, "Telecom Wavelength (1.5 µm) single photon emission from InP based quantum dots, Appl. Phys. Lett. 103, 181120 (2013).

(24)     V.I. Sichkovskyi, M. Waniczek, J.P. Reithmaier, "High-gain wavelength-stabilized 1.55 µm InAs/InP(100) based lasers with reduced number of quantum dot active layers", Appl. Phys. Lett. 102, Art. No. 221117 (2013).

(25)     D. Gready, G. Eisenstein, V. Ivanov, C. Gilfert, F. Schnabel, A. Rippien, J.P. Reithmaier, "High-speed 1.55 µm InAs/InGaAlAs/InP quantum dot lasers", IEEE Phot. Technol. Lett. 26 (1), pp. 11-13 (2014).

(26)     M. Benyoucef , T. AlZoubi, J. P. Reithmaier, M. Wu, A. Trampert, "Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon", phys. stat. sol. a 211(4), 817-822 (2014).

(27)     A. Capua, O. Karni, G. Eisenstein, V. Sichkovskyi, V. Ivanov, and J.P. Reithmaier, "Coherent control in a semiconductor optical amplifier operating at room temperature", Nature Communications 5, 5025 (2014).

(28)     M. Wu, A. Trampert, T. Al-Zoubi, M. Benyoucef, J.P. Reithmaier, "Interface structure and strain state of InAs nano-clusters embedded in silicon", Acta Materialia 90,  pp. 133 – 139 (2015).

(29)     G. Eisenstein, O. Karni, A. K Mishra, A. Capua, D. Gready, V. V. Sichkovskyi, V. Ivanov, J.P. Reithmaier, "Breaktroughs in Photonics 2014: Time scale dependent nonlinear dynamics in InAs/InP quantum dot gain media: from high-speed modulation to coherent light- matter interactions", IEEE Photonics Journal 7 (3), 0700407 (invited paper, 2015).

(30)     N. Felgen, B. Naydenov, S. Turner, F. Jelezko, J. P. Reithmaier, C. Popov, "Incorporation and study of SiV centers in diamond nanopillars", Diamond & Rel. Mat. 64, pp. 64-69 (2016).

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