News

13.10.2017 - 12:00

6th OCL-TP Workshop

On 30-31th October, the 6th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.

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28.02.2016 - 16:54

Q.com article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Q.com Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.

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12.12.2015 - 12:00

3rd OCL-TP Workshop

On 10-11th December, the 3rd International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.

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1992 and earlier

download of full text files is password protected (only internal access)

Journal Papers

  • R. Küchler, P. Hiergeist, G. Abstreiter, J.P. Reithmaier, H. Riechert, R. Lösch, "Magneto Luminescence Excitation Spectroscopy in Strained Layer Heterostructures" in "High magnetic fields in semiconductor physics 3. Quantum Hall effect, transport and optics", edited by G. Landwehr, Springer, Berlin, Springer Ser. Solid-State Sci. 101, 514 (1992)
  • H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices" in Resonant Tunneling in Semiconductors, edited by L.L. Chang et al., Plenum Press, New York, (1991) 31
  • R. Zaus, J. Peisel, B. Lengeler, J.P. Reithmaier, M. Schuster, H. Göbel, "Charakterisierung von (In,Ga)As/GaAs strained layer Multi-Quantum-Well-Strukturen mit hochauflösender Röntgendiffraktometrie und Computersimulation", ITG Fachbericht 112, 195 (VDE-Verlag, Berlin, Offenbach, 1990)
  • R.D. Schnell, D. Bernklau, H.-P. Reithmaier, H. Riechert, "Doppelbarrieren-Strukturen für elektronische Bauelementanwendungen resonanter Tunnelphänomene", ITG Fachbericht 112, 213 (VDE-Verlag, Berlin, Offenbach, 1990)

Conference Contributions

  • J.P. Reithmaier, St. Hausser, H.P. Meier, W. Walter, "Growth Studies of (Al,Ga,In)As on InP by Molecular Beam Epitaxy", Int. MBE-Conference, Schwäbisch Gmünd, Germany (August 1992)
  • R. Germann, St. Hausser, J.P. Reithmaier, "Reactive Ion Etching on InAlAs with Ar/Cl2 Mixtures for Ridge Waveguide Lasers", Int. Conf. on Microcircuit and Engineering, Regensburg, Germany, (September 1992)
  • L.R. Brovelli, R. Germann, J.P. Reithmaier, H. Jäckel, H.P. Meier, "Mode-Locked InGaAs/AlGaAs QW Laser with Integrated Passive Waveguide-Cavity and Stark-Modulator Grown on Nonplanar Substrate", IEEE Int. Semiconductor Laser Conf., Takamatsu, Japan (September 1992)
  •  J.P. Reithmaier, R. Broom, R. Germann, St. Hausser, Ph. Pitner, W. Walter, P. Wolf, "Low Threshold Current Density InAlAs/InGaAlAs/InGaAs Long Wavelength MQW-SCH Lasers Grown by MBE", Int. Euro MBE-Conference, Tampere, Finland (April 1991)
  • J.P. Reithmaier, H. Riechert, H. Schlötterer, G. Weimann, "In-Desorption during MBE-Growth of Strained InGaAs-Layers", Int. MBE-Conf., San Diego, USA (August 1990)
  • H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "MBE-Growth and Post-Growth Annealing of GaAs-Based Resonant Tunneling Structures, Viewed in Relation to Interface Roughness", Int. MBE-Conf., San Diego, USA (August 1990)
  • H. Riechert, D. Bernklau, J.P. Reithmaier, R.D. Schnell, "MBE Growth of High Performance GaAs/GaAlAs and InGaAs/GaAlAs Double Barrier Quantum Well Structures for Resonant Tunneling Devices", NATO Advanced Research Workshop: Resonant Tunneling in Semiconductors - Physics and Applications, El Escorial, Spain (May 1990)
  • R. Küchler, P. Hiergeist, G. Abstreiter, J.P. Reithmaier, H. Riechert, R. Lösch, "Magneto Luminescence Excitation Spectroscopy in Strained Layer Heterostructures" in "High magnetic fields in semiconductor physics 3. Quantum Hall effect, transport and optics", Int. Conf. on the Appl. of High Magnetic Fields in Semicond. Physics, Würzburg, Germany (July 1990)
  • J.P. Reithmaier, H. Riechert, O. Heinrich, P. Hiergeist, G. Abstreiter, "Strain effects on valence band states of pseudmorphic InGaAs/Ga(Al)As multiple quantum wells", Int. Conf. on GaAs and Related Compounds, Jersey Island, Great Britain (September 1990)
  • R. Zaus, M. Schuster, H. Göbel, J.P. Reithmaier, "Characterization of (In,Ga)As/GaAs Strained-Layer Multiple Quantum Wells with High-Resolution X-Ray Diffraction and Computer Simulations", E-MRS Fall Conf., Strasbourg, France (November 1990)
  • J.P. Reithmaier, "Bestimmung des Bandkantensprungs in elastisch verspannten InGaAs/GaAs-Mehrfachquantentöpfen mit optischen Methoden", DGKK-Workshop in Aachen, Germany (November 1989) (invited)
  • J.P. Reithmaier, H. Cerva, R. Lösch, "Critical Layer Thickness and Electrical Properties of Elastically Strained InGaAs/AlGaAs QWs", Int. Euro MBE-Conf., Grainau, Germany (March 1989)
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