13.10.2017 - 12:00

5th OCL-TP Workshop

On 30-31th October, the 5th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" will take place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


28.02.2016 - 16:54 article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.


12.12.2015 - 12:00

3rd OCL-TP Workshop

On 10-11th December, the 3rd International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


INA - Technological Physics > Research > Nano Fabrication & Devices

Nano Fabrication & Devices

Group Members

 Group Leader:  Johann Peter Reithmaier
 PhD Students:  Alireza Abdollahinia, Annette Becker
 Technicians:  Anna Rippien, Florian Schnabel, Kerstin Fuchs


The "Nano Fabrication & Devices" group deals with the development of novel fabrication processes on the basis of high-resolution lithography (e.g., electron beam lithography) and dry etching techniques for the  realization of semiconductor nano structures. Those techniques are used for the fabrication of optoelectronic devices, such as semiconductor lasers, amplifiers, optical switches, optoelectronic integrated circuits (OEICs), and more.

In addition, the group deals with the characterization of fabricated structures and devices. Special tools were constructed for the characterization of novel devices (e.g., fiber based linewidth measurement set-up, high-frequency set-up for small signal modulation, set-up for chirp measurement, and more). Also standard measurement tools are used for the basic characterization of lasers in pulsed and continous wave mode.



  • A. Becker, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, P. Baum, B. Witzigmann, J.P. Reithmaier, "InP-based narrow-linewidth widely tunable QD-DFB lasers", VDE-ITG meeting, Leipzig, Germany (May 2015) (pdf-File)

Overview Talks:
  • J. P. Reithmaier, G. Eisenstein, A. DeRossi, S. Combrié, "Power Saving in Communication Applications by Nano-Structured Optoelectronic Components", Technion / TU Berlin Green Photonic Symposium, Berlin (invited, March 2015) (pptx-File, 25 MB)
  • J.P. Reithmaier, "Nanostructured Materials for Optoelectronic Devices: Current Developments and Future Challenges", Int. Symp. on Advances in "Quantum Materials, Quantum Physics and Nanophotonics", Würzburg, Germany (invited, April 2015) (pptx-File, 93 MB)
  • J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, A. Rippien, F. Schnabel, B. Bjelica, B. Witzigmann, O. Eyal, G. Eisenstein, "The impact of low-dimensional gain material on emission linewidth and modulation speed in semiconductor lasers", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (invited talk, January 2016) (pptx-File, 8 MB

Picture gallery

High-resolution electron beam lithography system (Raith e-line)
ICP-RIE dry etching system for III-V semiconductor materials (Oxford 100)
Nano cavity
Nano cavity positioned at the location of a quantum dot (in cooperation with Thales)
Optical switch
Optical switch on the basis of coupled nano cavities (in cooperation with Thales)
SEM pictures of  DFB-Laser (top-view + FIB cross cut)
SEM views of ridge waveguide lasers with lateral feedback grating. The cross-cut was realized by a focussed ion beam system (dual-beam FIB).
Laser array
Monolithically integrated wavelength tunable ultra-narrow line width laser chip based on quantum dot material
Emission spectra of laser array
Emission spectra of laser array wavelength tuned by grating period and heat sink temperature
Line width (power dependence) of quantum dot DFB lasers
Dependence of line width on the drive current of a quantum dot DFB laser
RWG QD Laser with temperature stable light output characteristics
Temperature dependent llght output characteristics of quantum dot ridge waveguide laser at different heatsink temperatures (pulsed mode)
CW output characteristics of RWG QD laser (Inset: HF-submount with HF-Probe)
Current-voltage and current-light characteristics of a QD ridge waveguide laser. The Inset shows a laser chip mounted to a ceramic signal transducer and HF-Probe (bandwidth: 50 GHz)
Eye diagrams of  RWG QD laser modulated at 25 Bit/s and different operation temperatures
Eye diagrams of 338 µm long QD laser operated at different temperatures and at a modulation speed of 25 GBit/s (direct modulation) (in cooperation with Technion, Israel).
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