20.06.2018 - 13:00

7th OCL-TP Workshop

On 7-8th October, the 7th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


10.04.2018 - 12:00


Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high performance and low cost PIC transmitters (MOICANA)


28.02.2016 - 16:54 article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.


Project Monalisa

This project is a national cooperative project supported by the German Ministry of Eduction and Research (BMBF) and is entitled "Epitaxy of monolithically integrated III-V materials on silicon as light emitter" (Monalisa). The project is heading on a break-through in CMOS compatible growth techniques to allow a direct combination of high quality optically active III-V materials on silicon. Nanostructure techniques and self-organization phenomena are used to overcome current restrictions on crystal quality degeneration due to the high lattice mismatch between Si and III-V materials.

Five groups are working on different approaches to achieve the final goal of highly efficient light emitting diodes monolithically integrated on silicon.

The five groups are:

(1) Paul Drude Institute of Solid State Electronics (PDI), Berlin (project coordinator)
(2) Institute for Semiconductor Technology, University of Braunschweig
(3) Institute of Nanostructure Technology and Analytics (INA), University of Kassel
(4) Enterprise of Applied Micro- and Optoelectronics (AMO), Aachen
(5) Osram Opto Semiconductors GmbH, Regensburg

The INA group is focussing on self-organized growth processes in an molecular beam epitaxy environment to develop III-V quantum dot structures embedded in silicon matrix. The final goal is here to demonstrate an electrically driven light emitter on silicon.

The project is funded from August 2008 to July 2011.

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