News

13.10.2017 - 12:00

6th OCL-TP Workshop

On 30-31th October, the 6th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.

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28.02.2016 - 16:54

Q.com article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Q.com Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.

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12.12.2015 - 12:00

3rd OCL-TP Workshop

On 10-11th December, the 3rd International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.

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2002

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Journal Papers

Conference Contributions

  • F. Klopf, St. Deubert, J.P. Reithmaier, A. Forchel, P. Collot, M. Krakowski, "980 nm Quantum Dot Lasers for High Power Applications", Optoelectronics 2002, Symposium on Noval In-Plane Semiconductor Lasers VI (OE13), part of Photonics West San Jose, CA, USA (January 2002) (invited), SPIE Proceedings 4651, pp. 294-304 (2002)
  • J.P. Reithmaier, M. Kamp, A. Forchel, "Einsatz photonischer Kristalle in aktiven und passiven Bauelementen der Optoelektronik", Symposium über Information und Photonik auf der DPG-Tagung, Osnabrück, Germany (March 2002) (invited)
  • I.P. Marko, A.D. Andreev, A.R. Adams, R. Krebs, J.P. Reithmaier, A. Forchel, "Temperature Behaviour of Stimulated and Spontaneous Emission in 1.3-µm InAs/GaInAs Quantum Dots Lasers", SOIE-Conf., Cardiff, England (March 2002)
  • L. Bach, S. Rennon, J.P. Reithmaier, A. Forchel, "2- and 3-sectional laterally complex coupled DBR lasers fabricated by focused ion beam lithography", Int. Conf. on Indium Phosphide and Related Materials, Stockholm, Sweden (May 2002)
  • L. Bach, A. Wolf, J.P. Reithmaier, A. Forchel, "Square- and Racetrack-Square-Lasers as active components for monolithically integrated optoelectronic circuits", Int. Conf. on Indium Phosphide and Related Materials, Stockholm, Sweden (May 2002)
  • R. Schwertberger, D. Gold, J.P. Reithmaier, A. Forchel, "Self-assembled quantum-dot lasers on the InP system", Int. Conf. on Indium Phosphide and Related Materials, Stockholm, Sweden (May 2002)
  • T.D. Happ, F. Klopf, K. Avary, J.P. Reithmaier, M. Kamp, A. Forchel, I.I. Tartakovski, IA. Bazhenov, " Spontaneous emission enhancement of InGaAs quantum dots in 2D photonic crystal microcavities", Quant. Electron. & Laser Sci. Conf., Washington DC, USA (May 2002)
  • I.P. Marko, A.D. Andreev, A.R. Adams, R. Krebs, J.P. Reithmaier, A. Forchel, "Temperature Dependence of the Threshold Current in 1.3-µm InAs/GaInAs Quantum Dots Laser Diodes", IQEC-Conf., Moscow, Russia (June 2002)
  • J.P. Reithmaier, "Quantum Dot Lasers based on GaAs and InP substrates", Int. Workshop on Nano Optoelectronics, Berlin, Germany (July 2002) (invited)
  • A. Forchel, J.P. Reithmaier, "High Performance Quantum Dot Lasers", Optical Electronics and Communications Conference (OECC), Yokohama, Japan (July 2002) (invited)
  • J.P. Reithmaier, "Long Wavelength Emitting Quantum Dot Lasers", The Applied Optics and Opto-Electronics Conference (Photon02), Cardiff, England (September 2002) (invited)
  • R. Alizon, A. Bilenca, V. Mikhelashvili, G. Eisenstein, R. Schwertberger, D. Gold, J.P. Reithmaier, and A. Forchel, "Linear and non-linear characteristics of InAs/InP quantum dash optical amplifiers at 1550 nm", postdeadline paper at Europ. Conf. on Opt. Commun., Copenhagen, Denmark (September 2002)
  • J.P. Reithmaier, "Quantum Dot Gain Material for Broadband Device Aoolications", European OPTIMIST symposium on "Optical Broadband Communication" linked to the European Conf. on Optical Communication, Copenhagen, Danemark (September 2002) (invited)
  • R. Krebs, S. Deubert, J.P. Reithmaier, A. Forchel, "Improved performance of MBE grown quantum dot lasers with asymmetric dots in a well design emitting near 1.3 µm", Int. Conf. on Molecular Beam Epitaxy, San Francisco, CA, USA (September 2002)
  • R. Schwertberger, D. Gold, J.P. Reithmaier, A. Forchel, "Epitaxial growth of 1.55 µm emitting InAs quantum dashes on InP based heterostructures by gas-source MBE for long wavelength laser applications", Int. Conf. on Molecular Beam Epitaxy, San Francisco, CA, USA (September 2002)
  • S. Deubert, F. Klopf, J.P. Reithmaier, A. Forchel, " High-Power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications", Int. Semicond. Laser Conf., Garmisch-Partenkirchen, Germany (September 2002)
  • J.P. Reithmaier, "Semiconductor Quantum Dots: A New Class of Gain Material", Conf. on Broadband Access, Bukarest, Rumania (October 2002) (invited)
  • L. Bach, J.P. Reithmaier, A. Forchel, "Passive and Active Add-Drop Filter Devices Using a Laterally Coupled Micro Square Resonator Based on GaInAsP/InP", European Conf. on Optical Communication, Copenhagen, Denmark (October 2002)
  • D. Gold, R. Schwertberger, J.P. Reithmaier, A. Forchel, "InAs/InGaAlAs/InP Quantum Dash Lasers for Telecommunication Applications", IEEE LEOS annual meeting, Glasgow, U.K. (November 2002)
  • J.P. Reithmaier, L. Bach, A. Forchel, "Focused Ion Beams for Optoelectronic Applications", Int. Conf. on the Application of Accelerators in Research and Industry (CAARI), Denton, Texas, USA (November 2002) (invited)
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