20.06.2018 - 13:00

7th OCL-TP Workshop

On 7-8th October, the 7th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


10.04.2018 - 12:00


Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high performance and low cost PIC transmitters (MOICANA)


28.02.2016 - 16:54 article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.



download of full text files is password protected (only internal access)

Journal Papers

Conference Contributions

  • A. Forchel, M. Kamp, J.P. Reithmaier, J. Moosburger, T. Happ, S. Rennon, F. Klopf, R. Werner, U. Oesterle, "Photonic crytals for optolectronic devices", Conf. on Physics and Simulation of Optoelectronic Devices, San Jose, USA (January 2001) (invited), Proc. of SPIE vol. 4283, pp. 406-14, (2001)
  • F. Klopf, R. Krebs, J.P. Reithmaier, A. Forchel, "1.3 µm - InAs/GaInAs-Quantenpunktlaser", ITG-Fachtagung MMONT'01, Schloß Reisensburg, Germany (April 2001)
  • F. Klopf, S. Deubert, S. Parusel, J.P. Reithmaier, A. Forchel, "Comparison of 980 nm GaInAs/(Al)GaAs quantum dot and quantum well lasers", IEEE/LEOS Semiconductor Laser Workshop, Baltimore, USA (May 2001)
  • F. Klopf, R. Krebs, J.P. Reithmaier, and A. Forchel, "1.3 µm Quantum-Dot Lasers with Improved High Temperature Properties", Int. Conf. on Indium Phosphide and Related Materials, Nara, Japan (May 2001)
  • F. Klopf, J.P. Reithmaier, A. Forchel, P. Collot, M. Krakowski, "980 nm high power quantum dot lasers with improved high temperature properties", CLEO/QELS conference, Baltimore, USA (May 2001)
  • J.P. Reithmaier, "Self Assembling Epitaxial Techniques for Quantum Dots and Quantum Dot Lasers", European Summer School on Nanotechnology, Würzburg, Germany (July 2001) (invited)
  • C. Popov, J. Bulir, L. Zambov, M. Jelinek, M.-P. Delplancke-Ogletree, W. Kulisch, “Comparative characterization of nitrogen-rich CNx films prepared by different ICP-CVD techniques”, 13th EUROCVD Conf., Glyfada, Athens, Greece (August 2001)
  • L.M. Zambov, B. Ivanov, C. Popov, G. Georgiev, I. Stoyanov, D.B. Dimitrov, “Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition”, 13th EUROCVD Conf., Glyfada, Athens, Greece (August 2001)
  • J.P. Reithmaier, "Single Mode and High Power Lasers Based on (Ga)InAs Quantum Dots", European Workshop on Electronic Material Nanostructures: Fabrication and Characterisation, Warsaw, Poland (September 2001) (invited)
  • S. Rennon, F. Klopf, J.P. Reithmaier, and A. Forchel, "Quantum Dot Microlasers as High-Speed Light Sources for Monolithic Integration", European Conf. on Optical Communication, Amsterdam, The Netherlands (September 2001)
  • K. Avary, J.P. Reithmaier, F. Klopf, T. Happ, M. Kamp, A. Forchel, "Deeply etched two-dimensional photonic crystals fabricated in GaAs/AlGaAs slab waveguides by using chemically assisted ion beam etching", Int. Conf. on Micro- and Nano-Engineering, Grenoble, France (September 2001)
  • F. Klopf, R. Krebs, A. Wolf, M. Emmerling, J.P. Reithmaier, and A. Forchel, "1.3 µm Quantum Dot DFB Lasers", European Conf. on Optical Communication, Amsterdam, The Netherlands (September 2001) 
  • J.P. Reithmaier, F. Klopf, R. Krebs, R. Schwertberger, A. Forchel, "Quantum Dot Devices for Broad Band Telecommunication Applications", Int. Workshop on Optical Signal Processing 2001, Copenhagen, Denmark (November 2001) (invited)
  • J.P. Reithmaier, F. Klopf, R. Krebs, R. Schwertberger, A. Forchel, "Quantum dot lasers for high power and telecommunication applications", IEEE Lasers and Electro-Optics Society 2001 Annual Meeting, San Diego, CA, USA (November 2001) (invited), Conf. Proc. vol. 907, pp. 269-270, (2001)
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