20.06.2018 - 13:00

7th OCL-TP Workshop

On 7-8th June, the 7th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


10.04.2018 - 12:00


Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high performance and low cost PIC transmitters (MOICANA)


28.02.2016 - 16:54 article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.




Zeiss NVision 40 High End Cross Beam

Zeiss NVision
- Electron column: high resolution (1,3nm) field emission
- Ion column: high resolution (4nm), suitable for deposition and etching
- Fabrication of TEM-Samples and analysis in transmission

Raith eLine Electron Beam Lithography

Raith eLine

- High resolution (20nm and below)
- 100 x 100 mm laser interferometer table
- Positioning accuracy 2nm in x- and y-direction
- 1,6nm beam diameter
Stitching free exposure by FBMS (Fixed Beam Moving Stage) & MBMS (Modulated Beam Moving Stage) 

Karl Süss MA4 Maskaligner

Karl Süss Maskaligner
- up to 4"-substrates, up to7"-masks
- Resolution: standard 800nm, optional up to 300nm

EVG Al-4 Maskaligner

EVG Maskaligner
- up to 4"-substrates, up to 5"-masks

Epitaxy Systems

Varian Gen II Modula MBE

Molecular Beam Epitaxy
- Coupled systems for GaAs and InP growth
- Sub-nm layerthickness control
- In-situ-control by RHEED / Ultra High Vacuum ( 10E-8 - 10E-10 mbar )
- Materials : Ga, In, Al, As2, Si, Be
- Reactor A: Silicon E-Beam-Evaporator, Hydrogen-Cracker (H)
- Reactor B: Phosphorus-Cracker

Varian Gen II Mod MBE

Molecular Beam Epitaxy
- Epitaxy of single crystals
- Layer thickness accuracy in the sub-nm range
- In-situ-control by RHEED
- Ultra High Vacuum
- Material: Gallium(Ga), Indium(In), Aluminium(Al), Arsenic(As), Silicon(Si), Beryllium(Be)


MicroWave Plasma Chemical Vapour Deposition

- Process gases: methane(CH4), hydrogen(H2), nitrogen(N2), argon(Ar), oxygen(O2)
- Materials: Poly- and nanocrystalline diamond films (PCD and NCD)


Roth ß Rau Ionsys 1000 IBD

Ion Beam Deposition
Ion Beam Deposition
- Class 1 cleanroom section
- Multilayer systems (DBR,VCSEL,etc.)
- In-situ process control
- Material: metals(e.g. Al,Zr,Cr), oxides(e.g.ITO,TiO,SiO2), nitrides (e.g. Si2N3)
- Process gases: Argon(Ar), Xenon(Xe), Oxigen(O2), Nitrogen (N2)

Pfeiffer PLS 500 Evaporation System

Pfeiffer PLS 500
- Thermal or electron beam
- Materials: Titan(Ti), Nickel(Ni), Chrom(Cr), Platin(Pt), Aluminium(Al)

Balzers BAK 600 Evaporation System

Balzers BAK 600
- Thermal or electron beam
- Processgas: Argon (Ar)
- Material: Nickel (ni), Titan (Ti), Platin (Pt), Gold (Au), Germanium (Ge), Chrom (Cr)

Oxford Plasmalab 80 PECVD

Plasma Enhanced Chemical Vapour Deposition

- Process gases: Silan (SiH4), Hydrogene (H2), Ammonia (NH3), Nitrous oxide (N20)
- Material: Silicon Nitride (SiN), Silicon Oxide (SiO), Silicon (Si)

Emitech K550 Sputter Coater

Emitech K550 Sputter Coater
- Process gases: Argon (Ar)
- Material: Platinum (Pt)

Dry Etching Systems

2 Oxford Plasmalab 100 ICP-RIE

Inductive Coupled Plasma - Reactive Ion Etching

- ICP 1: for deep etching of silicon with flourine-donators (Bosch-Prozess)
- ICP 2: for etching of semiconductor materials (e.g. GaAs) with chlorine-donators

Castor and Pollux RIE

Castor and Pollux RIE
Reactive Ion Etching
Parallel Plate Reactor

- Process gases: Argon(Ar), Trifluormethane(CHF3), Sulfur hexafluoride(SF6), Oxygen(O2)
- Material: Silicon Nitride(SiN), Silicon Oxide(SiO)

Oxford Plasmalab 80 Plus RIE

Oxford 80 Plus RIE
Reactive Ion Etching
Parallel Plate Reactor

- Process gases: Hydrogen (H2), Methan(CH4)
- Material: Indium(In), Phosphorus(P), Gallium(Ga), Arsenic(As) compound semiconductors

Plasmalab RIE

Plasmalab RIE
Reactive Ion Etching

- Etching of BCB, SiO2, SiN, Si
- Process Gases: CHF3, Ar, SF6, O2

TePla 200-G Oxygen Asher

Oxygen Asher
- Etching of photo resist and organic residues
- Process gas: Oxygen(O2)

Other Devices

Xerion RTA

Xerion RTA
Rapid Thermal Annealing

Process gas: Argon (Ar)
Temperatures up to 400°C


Rapid Thermal Annealing

- Process gas: Argon (Ar), Nitrogen (N2)
- Temperaturecontrol by Thermoelement or Pyrometer
- Temperatures up to 1300°C

Bal-Tec CPD 030 Critical Point Dryer

Critcal Point Dryer
Process gas: Carbon Dioxide(CO2)


AFM Nanoscope Dimension 3100

AFM  Nanoscope Dimension 3100
- Atomic Force Microscopy with Contact- and Non-Contact-Modus
- Wafer up to 6" diameter


- Atomic Force Microscopy with Contact- and Non-Contact-Modus
- Scanning Tunnelling Microscopy
- Nanolithography

DualScopeTM 95 SPM System

DualScopeTM 95 SPM System
- The DualScopeTM 95 SPM scanner provides the facilities for all common and advanced SPM modes.
- Integrated electronics in the scan head guarantees lowest noise values in electrical SPM modes.
- Supported Modes: Contact mode (DC), intermittent mode (AC), non-contact mode, frequency modulation mode, lateral force mode, force spectroscopy, EFM, MFM, STM

2 Scanning Electron Microscopes / Hitachi s-4000 and s-4100

SEM s-4000
- Resolution: 1,5nm at 30kV, WD 5mm
- Magnification: 20x to 300000x
- Accelerating voltage: 0,5 to 30kV
- s-4000: Active image acquisition/processing system DISS 5
- s-4100: Energy dispersive spectrometer EDAX DX-4, Backscattered electron detector

Spectroscopy Set-up

Spectroscopy Set-up
Absorption- and Photoluminescence-Spectroscopy

- Temperature control down to 10K
- Sub-nm spectral resolution
- Si-photodiode and InGaAs-diode for wavelengths up to IR
- Lock-in detection

Micro Photoluminescence Spectroscopy

- high resolution 1m-Czerny-Turner Monochromator
- nitrogen cooled CCD-Camera (deep depletion, anti-etaloning)
- Cryostat cooled with liquid helium, Temperature Range: 3,5K-475K
- high resolution Linear Stages with 0,1µm position control
- microscope objective with 0,7µm resolution power

Laserdiode Characterization ( pulsed )

Laserdiode Characterization
- Driver current up to 2A
- 500ns puls duration, 1ms puls distance
- Temperature control from -10°C up to 150°C
- Ultrafast InGaAs- und Si-photodiodes for detection
- Farfieldmeasurement for x- und y-Axis

Laserdiode Characterization ( cw )

Laserdiode Characterization
- Driver current up to 500mA, with 10µA resolution
- Measurements of Multisectionlasers (3 Needles)
- Temperature control from -10°C up to 150°C

Laserdiode Characterization ( high power cw )

High Power cw Laserdiode Characterization
- Driver current up to 40A, 10mA resolution
- Complete laser diode characterization Io,Vf and Po
- Temperature control from -50°C up to 150°C, accuracy of +/-0,1°C
- Heat sink integrated

Optical Spectrum Analyser

Optical Spectrum Analyser
- Wavelength sensitivity range: 600nm - 1700nm
- High resolution of 0,02nm
- Suited for DWDM-Networkanalysis
- Extensive Analysis- and Fittingfunctions (Power,WDM,SMSR,etc.)
- 7 independent measurement tracks

Phillips PW 3710 MPD X-ray diffractometer

X-ray Diffraction
- High resolution (thickness, strain, dislocations)
- 3-Axes Geometry
- suited also for powder

Sloan Dektak IIA Profilometer

Dektak Profilometer
- 20nm resolution

Leica DMR Microscope

Leica DMR
- up to 1000x Magnification
- Contrast methods: bright field, dark field, differential interference contrast
- Impinging light and transmitted light

Plasmos SD-2100 Ellipsometer

Plasmos SD-2100
Monitoring of film thickness

Zygo New View 5000 White Light Interferometer

Zygo New View 5000
- Vertical resolution down to 0.1nm
- Objectives: 5x Michelson, 50x Mirau
- xy-motordesk for stitching
- Extended vertical scan length up to 20mm

Ambios Technology surface profilometer XP-100

Ambios Technology surface profilometer XP-100
- 3 nm measurements accuracy
- 0,03-10 mg Stylus-compression force
- 1,2 mm. max range of measurement in the z-direction
- analysis of  step height, layer thickness, roughness, waviness, thin-layer stress
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