20.06.2018 - 13:00

7th OCL-TP Workshop

On 7-8th October, the 7th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


10.04.2018 - 12:00


Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high performance and low cost PIC transmitters (MOICANA)


28.02.2016 - 16:54 article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.


Project Delight

Development of low-cost technologies for the fabrication of high-performance telecommunication lasers

The "Development of low-cost technologies for the fabrication of high-performance telecommunication lasers" (DeLight) project has two main objectives:

    * Development of high-performance surface-grating-based DFB/DBR telecommunication lasers;
    * Development of ultra-high speed directly modulated lasers (> 28 Gb/s intermediate target and > 43 Gb/s final target) with a simplified multi-section design, which exploit high-order photonic resonances for extending the modulation bandwidth.

The project approach is to develop a common technological fabrication platform, based on surface gratings and other surface micro- and nano-structures, for both types of lasers. One important advantage in using surface structuring for increasing the performances and functionality of edge-emitting lasers is the elimination of the regrowth stage, which adds to the fabrication cost, affects the laser performances (notably the reliability and the characteristics shift in time) and reduces yield. The surface micro- and nano-structures will be imprinted by the low-cost and high-yield nanoimprint lithography, which will contribute to reducing the fabrication cost.

The developed surface-oriented technology will be largely independent on the underlying semiconductor structure and will be applied for the fabrication of InP- and GaAs-based edge-emitting lasers (EELs) working in the 1300 and 1550 nm ranges. Although advanced materials (like dilute nitrides) as well as low-dimensional structures (quantum dots and quantum dashes) will be investigated for developing the active regions of the lasers, the surface-oriented technology will be directly applicable to epitaxial layer structures already developed and tested in regular Fabry-Perot telecommunication EELs. Thus the developed surface-oriented approach will have the unique advantage of enabling the fabrication of higherperformance lasers from already tested and qualified 'legacy' epiwafers.
List of partners

    * 1 (coordinator) Optoelectronics Research Centre, Tampere University of Technology TTY Finland
    * 2 Institute of Nanostructure Technologies and Analytics, Universität Kassel UKAS Germany
    * 3 Technische Physik, Universität Würzburg UWUERZ Germany
    * 4 Department of Electronics, Politecnico di Torino PT Italy
    * 5 III-V Lab, Alcatel-Thales III-V Lab France
    * 6 Electrical Engineering Department, Israel Institute of Technology TN Israel
    * 7 Modulight Inc. Modu Finland
    * 8 MergeOptics GmbH Merge Germany
    * 9 Institute of Physics, Wroclaw University of Technology WrUT Poland

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