10.04.2018 - 12:00


Monolithic cointegration of QD-based InP on SiN as a versatile platform for the demonstration of high performance and low cost PIC transmitters (MOICANA)


13.10.2017 - 12:00

6th OCL-TP Workshop

On 30-31th October, the 6th International Workshop between the "Optical Communication Lab" and the Department "Technological Physics" took place under framework of long-term cooperation agreement between the Israel Institute of Technology and the University of Kassel.


28.02.2016 - 16:54 article in the „Physik in unserer Zeit“

A recent open-access article by research partners from the BMBF Research Network project entitled "Sichere Kommunikation per Quantenrepeater" is published in "Physik in unserer Zeit", which reports on the current state and the main challenges in this field.


INA - Technological Physics > Benyoucefpubl

  • M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler 
    Telecom-wavelength (1.5 µm) single-photon emission from InP-based quantum dots
    Appl. Phys. Lett. 103, 162101 (2013)
  • M. Benyoucef, M. Usman, J.P. Reithmaier
    Bright light
    emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrate
    Appl. Phys. Lett. 102, 132101 (2013)
  • M. Benyoucef, V. Zuerbig, J.P. Reithmaier, T. Kroh, A.W.Schnell, T. Aichele, O. Benson
    Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperatures

    Nanoscale Research Letters 7, p. 493 (2012)
  • M. Benyoucef, J.-B. Shim, J. Wiersig, O.G. Schmidt
    Quality-factor enhancement of supermodes in coupled microdisks
    Opt. Lett. 36, 1317 (2011).
  • J. Potfajova, B. Schmidt, M. Helm, T. Gemming, M. Benyoucef, A. Rastelli, O. G. Schmidt
    Microcavity enhanced silicon light emitting pn-diode
    Appl. Phys. Lett. 96, 151113 (2010).
  • M. Pfeiffer, K. Lindfors, C. Wolpert, P. Atkinson, M. Benyoucef, A. Rastelli, O. G. Schmidt, H. Giessen, M. Lippitz
    Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna
    Nano Lett. 10, 4555 (2010).
  • F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G. Schmidt
    Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress
    Phys. Rev. Lett. 104, 067405 (2010).
  • M. Benyoucef, L. Wang, A. Rastelli, O. G. Schmidt
    Toward quantum interference of photons from independent quantum dots
    Appl. Phys. Lett. 95, 261908 (2009).
  • M. Benyoucef, H-S. Lee, J. Gabel, T. W. Kim, H. L. Park, A. Rastelli and O. G. Schmidt
    Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate
    Nano Letters 9, 304-307 (2009).
  • P. Atkinson, S. Kiravittaya, M. Benyoucef, A. Rastelli and O.G. Schmidt
    Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

    Appl. Phys Lett. 93, 101908 (2008).
  • S. Mendach, S. Kiravittaya, M. Benyoucef, A. Rastelli, R. Songmuang, and O.G. Schmidt
    Bidirectional wavelength tuning of semiconductor quantum dots as artificial atoms in an optical resonator

    Phys. Rev. B 78, 035317 (2008).
  • M. Benyoucef, S. Kiravittaya, Y.F. Mei, A. Rastelli and O. G. Schmidt
    Strongly coupled semiconductor microcavities: A route to couple artificial atoms over micrometric distances
    Rev. B 77, 035108 (2008).
  • S. Kiravittaya, M. Benyoucef, R. Zapf-Gottwick, A. Rastelli, and O. G. Schmidt
    Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting
    Phys Lett. 89, 233102 (2006).
  • M. Benyoucef, A. Rastelli, S. M. Ulrich, P. Michler, and O. G. Schmidt
    Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots,
    Nanoscale Research Letters 1,172 (2006).
  • M. Schwab, H. Kurtze, T. Auer, T. Berstermann, M. Bayer, .J. Wiersig, N. Baer, C. Gies, F. Jahnke, J. P. Reithmaier, A. Forchel, M. Benyoucef and P. Michler
    Radiative emission dynamics of quantum dots in a single cavity micropillar
    Rev. B 74, 045323 (2006).
  • S. Mendach, R. Songmuang, S. Kiravittaya, A. Rastelli, M. Benyoucef, and O. G. Schmidt
    Light emission and wave guiding of quantum dots in a tube
    Phys. Lett. 88, 111120 (2006).
  • S. M. Ulrich, M. Benyoucef, P. Michler, N. Baer, P. Gartner, F. Jahnke, M. Schwab, H. Kurtze, M. Bayer, S. Fafard, and Z. Wasilewski
    Correlated Photon-Pair Emission from a Charged Single Quantum Dot
    Rev. B 71, 235328 (2005).
  • M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
    Correlated photon pairs from single InGaAs/GaAs quantum dot in pillar microcavities
    J. Appl.
    Phys. 97, 023101 (2005).
  • M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
    Enhanced correlated photon pair emission from a pillar microcavity
    New J. Phys. 6, 91(2004).
  • G. Martinez-Criado, M. Kuball, M. Benyoucef, A. Sarua, E. Frayssinet, B. Beaumont, P. Gibart, C. R. Miskys, and M. Stutzmann
    Free-standing GaN grown on epitaxial lateral overgrown GaN substrates

    J. Cryst. Growth 255, 277 (2003).
  • M. Benyoucef, M. Kuball, B. Beaumont, and P. Gibart
    Raman mapping, photoluminescence investigations and finite element calculations of epitaxial lateral overgrown (ELO) GaN grown on silicon substrate
    Phys Lett. 80, 2275 (2002).
  • M. Benyoucef, M. Kuball, B. Beaumont, and P. Gibart 
    Finite element analysis of epitaxial lateral overgrown (ELO) GaN: voids at the coalescence boundary
    Phys. Lett. 79, 4127 (2001).
  • C. Marinelli, M. Bordovsky, L. J. Sargent, M. Gioannini, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. Benyoucef, M. Kuball, G. Hasnain, T. Takeuchi, and R. P. Schneider
    Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes
    Phys. Lett. 79, 4076 (2001).
  • M. Benyoucef, M. Kuball, J.M. Sun, G.Z. Zhong, and X.W. Fan
    Raman scattering and photoluminescence studies on Si/SiO2 superlattices
    J. Appl.
    Phys. 89, 7903 (2001).
  • M. Kuball, M. Benyoucef, F.H. Morrissey, and C.T. Foxon
    Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping
    MRS Internet J. Nitride Semicond.
    Res. 5S1, W12.3 (2000).
© INA 2018. Version: 04.06.2018 - Impressum | Sitemap | RSS-Feed